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RF Loss and Cross Talk on Extremely High Resistivity (10k-1M Ohm-cm) Si Fabricated by Ion Implantation by Y. H. Wu A. Chin K. H. Shih C. C. Wu C. P. Liao S. C. Pai & C. C. Chi

Author:Y. H. Wu, A. Chin, K. H. Shih, C. C. Wu, C. P. Liao, S. C. Pai & C. C. Chi , Date: February 19, 2022 ,Views: 20

RF Loss and Cross Talk on Extremely High Resistivity (10k-1M Ohm-cm) Si Fabricated by Ion Implantation by Y. H. Wu A. Chin K. H. Shih C. C. Wu C. P. Liao S. C. Pai & C. C. Chi

Author:Y. H. Wu, A. Chin, K. H. Shih, C. C. Wu, C. P. Liao, S. C. Pai & C. C. Chi
Format: pdf
Tags: Session TU3D: Monolithic and Semiconductor Technology, RF Loss and Cross Talk on Extremely High Resistivity (10k-1M Ohm-cm) Si Fabricated by Ion Implantation


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RF Loss and Cross Talk on Extremely High Resistivity (10k-1M Ohm-cm) Si Fabricated by Ion Implantation by Y. H. Wu A. Chin K. H. Shih C. C. Wu C. P. Liao S. C. Pai & C. C. Chi.pdf


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