Next Generation Spin Torque Memories by Brajesh Kumar Kaushik Shivam Verma Anant Aravind Kulkarni & Sanjay Prajapati

Author:Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni & Sanjay Prajapati
Language: eng
Format: epub
Publisher: Springer Singapore, Singapore

(3.5)

where, n x , n y , and n z are demagnetizing tensor coefficients.

The resultant Rashbha and SHE fields make SOT-MTJ different from the STT-MTJ. The rashbha field can be written as

(3.6)

where, C R is the Rashbha coefficient.

The SHE field is given by

(3.7)

where, C SHE is SHE coefficient. The values of constants C R and C SHE depend on the SOT-MTJ stack. The external applied field H ex together with Rashbha and SHE fields performs the magnetization switching of the free layer.

The free layer magnetization dynamics of the MTJ considering different torques acting upon the device can be given with the use of spherical co-ordinates [13] as

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