Nanostructured Thermoelectric Films by Zhiyu Hu & Zhenhua Wu

Author:Zhiyu Hu & Zhenhua Wu
Language: eng
Format: epub
ISBN: 9789811565182
Publisher: Springer Singapore

Sample

Sputtering

time

(min)

Thickness

(nm)

Te content

(at.%)

Grain size

(nm)

1#

40

90

66.2

3.1

2#

60

140

65.9

3.6

3#

85

190

66.3

4.4

4#

100

230

66.1

5.9

5#

120

270

65.8

6.2

As shown in Fig. 5.10, Sb2Te3 films of different thicknesses deposited at room temperature can be seen that as the thickness of the film increases the grains on the surface of the film increase and the size increases. At the beginning of thin film deposition, since the substrate is at a relatively low temperature (room temperature), the atom diffusion ability from the target surface to the substrate is weak, forming a large number of flat and dense microcrystals as shown in Fig. 5.10a. With the extension of the sputtering time, the relative temperature of the substrate increases under the irradiation of the sputtering glow, the film is heated the atoms get enough energy and time to diffuse and recrystallize and the small crystal grains in the film fuse with each other. As the film grows, the film grain size increases slightly.

Fig. 5.10SEM images of Sb2Te3 films of different thicknesses deposited at room temperature

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