Low-Power Millimeter Wave Transmitters for High Data Rate Applications by Khaled Khalaf & Vojkan Vidojkovic & John R. Long & Piet Wambacq

Author:Khaled Khalaf & Vojkan Vidojkovic & John R. Long & Piet Wambacq
Language: eng
Format: epub
ISBN: 9783030166533
Publisher: Springer International Publishing

Note that as discussed in Sect. 2.​1.​5, the high compression point values at very low bias voltages are useless due to the large expansion. The gain expansion represents a nonlinearity similar to the gain compression that affects both EVM and the output PSD. Therefore, the PA operation in deep class-AB is limited to dB expansion in its gain curve.

3.3.1 Circuit Description

A TX front-end is implemented in 28 nm-HPM technology as part of a single antenna-path transceiver testchip that also includes an on-chip PLL with an I-Q 60 GHz VCO and LO distribution that also feeds an RX front-end. The PA is similar to that of Sect. 3.2 (see Fig. 3.9), which includes two transformer-coupled stages with neutralized amplifiers in each. Transistor sizes of m and with minimal length are used in the first and second PA stages, respectively. Figure 3.25 shows the used Gilbert upconversion mixer, where the transconductors are biased with a current source to reduce sensitivity to the gate bias voltage.

Fig. 3.25Gilber upconversion mixer schematic with current-source biasing

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