Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by Gaudenzio Meneghesso Matteo Meneghini & Enrico Zanoni

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by Gaudenzio Meneghesso Matteo Meneghini & Enrico Zanoni

Author:Gaudenzio Meneghesso, Matteo Meneghini & Enrico Zanoni
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham


Fig. 5.14Weibull plots with the variation of (a) ambient temperature T a, (b) input voltage V DD, and (c) peak-switching current I DP. The insets in each figures show corresponding acceleration factors [42]

Thirdly, we investigate the acceleration factor of I DP on L sw. Figure 5.13b shows the I DS -V DS loci during the switching event with the variation of I DP. Here, applying constant voltage of 640 V to V DD, we perform D-HTOL test with varying I DP. Figure 5.14c shows the Weibull plots for the several I DP. L sw is shortened as I DP increases. The inset in Fig. 5.14a shows the MTTF as a function of I DP, from which the voltage acceleration factor β c is obtained to be 0.47. Based on the acceleration factors obtained here, we estimate L sw for the LR-load switching under a condition of V DD = 400 V, I DP = 27 A, and T J = 95∘C to be 6000 h.

Furthermore, we roughly estimate the switching lifetime for a 3 kW totem-pole power factor correction (PFC) circuit to be roughly 24 years, which is obtained based on the assumption that each switching pulses shortens the lifetime by the amount estimated by the instantaneous I DP and V DD values combined with the obtained acceleration factors. We suppose the expected lifetime is long enough for most of the PFC applications.

In fact, the application-level reliability on GaN transistors is still controversial, and more comprehensive research is needed because there are only limited number of lifetime data when employed in some real applications so far [6, 39, 40]. However, since the lifetime estimated in this report is sufficiently long, we believe we can step forward to employ GaN transistors in power converter applications. We expect further reliability investigation is performed in the application level in the foreseeable future.



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