Flash Lamp Annealing by Lars Rebohle & Slawomir Prucnal & Denise Reichel

Author:Lars Rebohle & Slawomir Prucnal & Denise Reichel
Language: eng
Format: epub
ISBN: 9783030232993
Publisher: Springer International Publishing

Zhou et al. have investigated the influence of different annealing techniques on the IMT and the Se distribution in ion implanted Si. The implanted samples were recrystallized either via LPE during ns-range PLM or via SPE during ms-range FLA [84]. Figure 4.11 shows the distribution of Se in Si obtained with the SRIM code [6] and experimental RBS spectra obtained from Si:Se annealed either by FLA for 1.3 ms or by PLM for 30 ns. The power of the laser pulse was sufficiently high to melt an about 120 nm thick Si layer. The solidification process of the molten layer during PLM is in the μs range. During FLA the maximum temperature is lower than the melting temperature of amorphous Si (<1200 °C) causing SPE of the implanted layer. Ion implantation performed with a single energy always leads to a Gaussian-like distribution of the implanted elements in the solids. This is confirmed both by simulation and by experiments. Surprisingly, after FLA the Se distribution in Si looks similar to that in the as-implanted stage. This means that the diffusion of Se during ms-range SPE is fully suppressed. During FLA for 1.3 ms the amorphous/crystalline interface moves towards the surface with a speed of about 10 m/s which is much faster than the diffusion of Se in Si in the solid phase. This implies that during the epitaxial regrowth of the implanted layer Se is trapped into the lattice of Si and frozen there. Moreover, the snow-plough effect typically observed in heavily implanted semiconductors after FLA is not present.

Fig. 4.11Simulated as-implanted depth distribution and experimental depth distribution of Se in Si obtained after FLA and PLM as derived from RBS. After [84]

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