Exciton Transport Phenomena in GaAs Coupled Quantum Wells by Jason Leonard

Exciton Transport Phenomena in GaAs Coupled Quantum Wells by Jason Leonard

Author:Jason Leonard
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham


Fig. 3.5Flat electrode optically controlled excitonic transistor overview and operation. (a) SEM images of the planar-electrode device. Red and green circles indicate the excitation spots of the source (S) and gate (G) beam, respectively. (b, c) Energy-resolved images of the exciton emission in (b) off and (c) on states for the planar-electrode transistor. The power of the source beam P S  = 10 μW (b, c). The power of the gate beam P G  = 0 (b) and 2 μW (c). (d) Spatial profiles of the source (red) and gate (green) excitation beam spots. (e) Emission intensity of indirect excitons for the planar-electrode transistor in off state (red, P S  = 10 μW, P G  = 0), in on state (black, P S  = 10 μW, P G  = 2 μW), and when only the gate beam is on (green, P S  = 0, P G  = 2 μW). V e  = −4 V



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