Chips 2020 by Bernd Hoefflinger

Author:Bernd Hoefflinger
Language: eng
Format: epub
Publisher: Springer Berlin Heidelberg, Berlin, Heidelberg

The 3D integration of these PEs with performance levels of 1 fJ per 16 × 16 multiply (Sect. 3.6), together with 3D SRAMs at 1 fJ/kb will advance information processing to truly disruptive innovations (Chaps. 13,16,18).

11.2 DRAMs (Dynamic Random-Access Memories)

DRAMs are the famous MOS memories with just one transistor per bit , invented in 1968 and in production since 1971. The basic elements of this memory are illustrated in Fig. 11.8.

Fig. 11.8Memory cell, bit-line, and bit-line sense amplifier of a MOS DRAM. WL word line, BL bit line

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