Semiconductor Power Devices by Josef Lutz Heinrich Schlangenotto Uwe Scheuermann & Rik De Doncker

Author:Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann & Rik De Doncker
Language: eng
Format: epub
Publisher: Springer Berlin Heidelberg, Berlin, Heidelberg

Then we obtain for the collector current I C1 of the pnp-partial transistor according to Eq. (7.1)

(8.1)

where I p0 is the diffusion leakage current from the middle weakly doped n−-layer. In the same way we obtain for the npn-partial transistor

(8.2)

with I n0 as the diffusion leakage current in the p-base. The anode current I A is the sum of both partial currents I C1 and I C2:

(8.3)

From the balance of currents flowing into the device and out of the device it holds additionally that

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