Competition between continuous etching and surface passivation for Cl2 chemisorption onto GaAs(100) c(8×2), GaAs(100) c(2×8), and GaAs(110) (1×1) surfaces by Daniel J. D. Sullivan; Harris C. Flaum; Andrew C. Kummel

Competition between continuous etching and surface passivation for Cl2 chemisorption onto GaAs(100) c(8×2), GaAs(100) c(2×8), and GaAs(110) (1×1) surfaces by Daniel J. D. Sullivan; Harris C. Flaum; Andrew C. Kummel

Author:Daniel J. D. Sullivan; Harris C. Flaum; Andrew C. Kummel
Format: pdf
Tags: SURFACE TEMPERATURE; PASSIVATION; ETCHING; GALLIUM ARSENIDES; CHLORINE MOLECULES; CHEMISORPTION; SURFACE STRUCTURE; STOICHIOMETRY; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; OVERLAYERS; ARSENIC CHLORIDES
Published: 1999-09-19T00:50:25+00:00


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