Atomic Switch by Masakazu Aono

Author:Masakazu Aono
Language: eng
Format: epub
ISBN: 9783030348755
Publisher: Springer International Publishing

2.1 Typical Switching Characteristics

The initial devices were fabricated with SPE films prepared by drop-casting from PEO (M W = 2 × 106) and silver perchlorate (AgClO4), which were dissolved in water [10, 11]. The device has a cross-point structure with top Ag and bottom Pt electrodes, as illustrated schematically in Fig. 1a. The Ag salt concentrations of the Ag-included PEO (AG-PEO) film ranged from 1 to 8 wt%. Thicknesses of SPE films were on the order of 1 μm. Figure 1b shows typical I–V curves measured for a Ag/Ag-PEO/Pt device with a Ag salt concentration of 3 wt%. A current compliance I CC was set only for positive bias to regulate a low resistance (on) state current. The devices initially exhibited a high resistance (off) state with greater than 10 GΩ. When the bias voltage was applied to the Ag electrode, the current suddenly jumped up to the compliance level at a relatively higher bias voltage, which turns on the device with an on state of 3 kΩ. Subsequent negative bias sweep sharply switched the device back to the off state of ~1 GΩ, while the device kept a high resistance to 0 V, indicating bipolar nonvolatile switching behavior. A higher positive voltage is always required to turn on the device on the first sweep cycle, corresponding to a forming process. The device showed high on/off resistance ratio of ~105, and the on resistance was found to decrease linearly with a decrease of the ambient temperature, suggesting metallic transport in the on state.

Fig. 1(a) Schematic and optical microscope image (top view) of the fabricated device. The scale bar is 50 μm. (b) Typical I–V curves of a Ag/Ag-PEO/Pt device with a Ag salt concentration of 3 wt%, measured for three consecutive sweep cycles. Copyright 2011, John Wiley & Sons

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