Atomic-Scale Electronics Beyond CMOS by Mircea Dragoman & Daniela Dragoman

Author:Mircea Dragoman & Daniela Dragoman
Language: eng
Format: epub
ISBN: 9783030605636
Publisher: Springer International Publishing

A recent review about phase transition mechanisms in vanadium dioxide can be found in Shao et al. (2018). It is interesting to note that in a MIM-like structure where the insulator layer I is VO2, the current-voltage dependence displays a S-shaped negative differential resistance (NDR) region, as shown in Fig. 3.50 (Pergament et al. 2015). The threshold voltage necessary to trigger the NDR is and is around few volts, while the current is reaching 0.1 mA.

Fig. 3.50NDR in VO2 MIM-like structures

Phase-change transistors are dedicated also to low SS for low power applications. There are two types of transistors based on MIT materials: the Mott transistor and the phase transistor, also referred to as negative differential resistance FET (NDR FET) for low power applications.

The Mott FET is a FET having as channel a thin MIT material. Initially, a perovskite-structure cuprate Y1−xPrxBa2Cu3O7-δ (YPBCO), used in high temperature superconductors, was selected as the Mott MIT. This material can be epitaxially grown on the strontium titanate (STO) crystal. YPBCO displays a Mott transition from insulating to a metallic state by injecting in cuprate charges from a back gate. The conducting channel of p-type is formed at the interface cuprate/STO, and has a thickness of 1 nm (see Fig. 3.51). In this Mott FET, the drain current in the on state is reaching 40 μA at a drain voltage of 2.5 V and a gate voltage of −12 V, and is much reduced in the off state, for gate voltages below −2 V. This initial Mott FET was not further developed because its constitutive materials are very peculiar.

Fig. 3.51The Mott FET

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