Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond by Guilei Wang

Author:Guilei Wang
Language: eng
Format: epub, pdf
ISBN: 9789811500466
Publisher: Springer Singapore

4.1.2 Summary of SiGe S/D Technology

From the development history of the SiGe S/D strain technology in large-scale integrated circuit manufacturing (Fig. 4.1), it can be seen that the SiGe S/D are mainly used to introduce the compressive strain parallel to the channel direction in the channel plane of the PMOS device, which can improve the device performance. The main technical features are summarized as follows:(1)In the SiGe S/D process, the Ge composition in the SiGe film increases as the device size decreases. Figure 4.2a shows the effect of the Ge composition in SiGe S/D on the strain in various Intel technology generations [9]. The Ge composition increased from 18% in 90 nm to about 40% in 32 nm, and the compressive stress generated on the channel increased from 0.5 to 2 GPa. Figure 4.2b summarizes the contribution of the SiGe S/D strain technique to the drive current of each technology node in PMOS. As discussed in the previous section, increasing the Ge composition would reduce the critical thickness of the SiGe film. Therefore, the SiGe process should be optimized and adjusted while increasing the Ge composition to reduce the strain relaxation and defect generation caused by the increase of the Ge composition.

Fig. 4.2The influence of a the Ge component in SiGe S/D on the increase of the strain and b the increase of the drive current in various Intel technology generations [9]

Download

Copyright Disclaimer:
This site does not store any files on its server. We only index and link to content provided by other sites. Please contact the content providers to delete copyright contents if any and email us, we'll remove relevant links or contents immediately.