The Nanoscale Optical Properties of Complex Nanostructures by Jordan A. Hachtel

Author:Jordan A. Hachtel
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham

To resolve the layers of the gate structure with compositional (as well as structural) information and nanoscale precision, EEL spectrum imaging is performed. Figure 4.5 shows the various SI for the elements present in the FinFET. The EELS edges used are the (a) Si K-edge at 1839 eV, (b) the Ge L-edge at 1217 eV, (c) the O K-edge 532 eV, (d) the Hf M-edge at 1662 eV, (e) the Ti L-edge and the N K-edge integrated together at 456 eV and 401 eV, respectively, and (f) the W M-edge at 1809 eV. The composite image of all six spectrum images can be seen in Fig. 4.5g showing six distinct regions: the Ge channel, a Si-rich outer layer to the channel, the SiO2 layer between the gate and the channel, the HfO2 gate oxide, the TiN gate, and the W via. The scale bar shows that layer thicknesses of order ˜1 nm can be resolved and give a high-precision map of the gate-stack region.

Fig. 4.5Elemental composition of Ge pMOS FinFET. (a)–(f) SI maps of the various elements present in the FinFET. (a) Si, (b) Ge, (c) O, (d) Hf, (e) TiN, (f) W. (g) Shows a composite image of the six SI in (a)–(f). From this all the layers of the gate stack are revealed with nanometer precision. Ⓒ2017 IEEE. Reprinted with permission from [25]

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