Nanoelectronics Fundamentals by Hassan Raza

Author:Hassan Raza
Language: eng
Format: epub
ISBN: 9783030325732
Publisher: Springer International Publishing

Similarly, an n-channel MOS (generally referred to as nMOS) is shown in Fig. 5.8b, where the source and the drain contacts consist of degenerately doped regions, and the substrate consists of p-type semiconductor. In this case, by applying a large enough positive gate voltage, one may accumulate enough electrons at the substrate/gate interface to form an n-channel between the source and the drain, thereby turning the transistor ON.

Electrostatics

For an nMOS, isolated band diagrams for the source, channel, and drain are shown in Fig. 5.9a. nMOS with source/drain contacts shown in Fig. 5.8b may be thought of as two back-to-back connected pn junction diodes. Due to this similarity, the band diagram of the channel and the source/drain contacts looks like a series combination of the band diagrams of two pn junction diodes as shown in Fig. 5.9b. The band diagram for a shorter channel length is also shown in Fig. 5.9c.

Fig. 5.9nMOS. Equilibrium band diagram for a isolated source, channel and drain, b nMOS with a long channel, c nMOS with a short channel

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