Introduction to Electronic Materials and Devices by Sergio M. Rezende

Author:Sergio M. Rezende
Language: eng
Format: epub
ISBN: 9783030817725
Publisher: Springer International Publishing

As mentioned in the introduction of this section, the development of materials and processes has made possible a continuous scaling down in size of the components of ICs over the past decades. Typical MOSFET channel lengths were a few decades ago of several micrometers, but modern integrated circuits are incorporating MOSFETs with channel lengths of tens of nanometers, as clearly shown in Fig. 7.40. However, the semiconductor industry maintains a roadmap which sets the pace for further reductions in the size of MOSFETs. Historically, the difficulties with decreasing the size of the MOSFET have been associated with the semiconductor device fabrication process, the need to use very low voltages, and with poorer electrical performance necessitating circuit redesign and innovation. Further reduction in size will depend on the improvement of fabrication technologies in industry, as well as the discovery of new phenomena, materials, and devices in academia in the coming years.

Problems

7.1

The variation in the concentration of holes in excess of equilibrium, δp (x), as function of position x at the base of a p-n-p transistor is given by Eq. (7.15). Plot curves of δpB(x)/ΔpE (preferably on a computer), for three base thicknesses, l = 2Lp, 0.5 Lp, and 0.1 Lp, where Lp is the diffusion length. Using the plots, explain which thickness is the best for a good transistor.

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