Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO by Unknown

Author:Unknown
Language: eng
Format: epub
Publisher: Wiley
Published: 2016-11-30T00:00:00+00:00

5.3.1.3 Serial Backup FF

Although the above‐mentioned backup FF in active mode operates at an equivalent rate to a standard D‐FF, the backup circuit section is constructed from multiple Si FETs. Accordingly, the circuit area is larger than for a standard D‐FF. To avoid the area increase incurred by the backup function, a serial backup FF was configured [3, 4].

Figure 5.13 is a circuit diagram of a serial backup FF. In this design, a CAAC‐IGZO FET and a storage capacitor (CAP) are added to the latch of the master part in a normal D‐FF. This configuration has the advantage of a small number of additional FETs required for the backup function and control‐signal lines. However, the delay time is considerably larger than that in the normal D‐FF due to the different driving performances of the CAAC‐IGZO and Si FETs.

Figure 5.13 Circuit diagram of a serial backup FF.

Source: Adapted from [4]

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